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STMicroelectronics ESM2012DV

Power Bipolar Transistor, 120A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Width
25.4 mm

Physical

Case/Package
Module
Mount
Chassis Mount, Screw
Number of Pins
4

Technical

Collector Emitter Breakdown Voltage
120 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
150 V
Current Rating
120 A
Emitter Base Voltage (VEBO)
7 V
hFE Min
1200
Max Collector Current
120 A
Max Operating Temperature
150 °C
Max Power Dissipation
175 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
175 W
Voltage Rating (DC)
120 V

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