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STMicroelectronics BUZ71

Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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Compliance

RoHS
Non-Compliant

Physical

Case/Package
TO-220

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
85 mΩ
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
175 °C
Min Operating Temperature
-65 °C
Power Dissipation
60 W
Rise Time
65 ns
Turn-Off Delay Time
70 ns

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