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STMicroelectronics BUV20

Bipolar (BJT) Transistor NPN 125 V 5 A 8MHz 25 W Chassis Mount TO-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
8.92 mm
Length
39.3 mm
Width
26 mm

Physical

Case/Package
TO-3
Mount
Chassis Mount, Through Hole
Number of Pins
2
Weight
IBS

Technical

Collector Base Voltage (VCBO)
160 V
Collector Emitter Breakdown Voltage
125 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
125 V
Current Rating
50 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
hFE Min
20
Max Collector Current
50 A
Max Operating Temperature
200 °C
Max Power Dissipation
250 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
250 mW
Transition Frequency
8 MHz
Voltage Rating (DC)
125 V

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