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STMicroelectronics BUT30V

Bipolar (BJT) Transistor NPN 125 V 1 A - 25 W Chassis Mount ISOTOP

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
9.1 mm
Length
38.2 mm
Width
25.5 mm

Physical

Case/Package
Module
Contact Plating
Nickel
Mount
Chassis Mount, Panel, Screw
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
200 V
Collector Emitter Breakdown Voltage
200 V
Collector Emitter Saturation Voltage
900 mV
Collector Emitter Voltage (VCEO)
125 V
Current Rating
100 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
hFE Min
27
Max Collector Current
100 A
Max Operating Temperature
150 °C
Max Power Dissipation
250 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
250 W
Voltage Rating (DC)
125 V

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