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STMicroelectronics BUL39D

Bipolar (BJT) Transistor NPN 45 V 4 A - 7 W Through Hole TO-22AB

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
9.15 mm
Length
10.4 mm
Width
4.6 mm

Physical

Case/Package
TO-220
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
850 V
Collector Emitter Breakdown Voltage
450 V
Collector Emitter Saturation Voltage
1.1 V
Collector Emitter Voltage (VCEO)
450 V
Current Rating
4:00 AM
Element Configuration
4 A
Emitter Base Voltage (VEBO)
9 V
hFE Min
4
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
70 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
70 W
Voltage Rating (DC)
450 V

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