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STMicroelectronics BUL1102EFP

STMICROELECTRONICS BUL1102EFP Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
450 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
450 V
Emitter Base Voltage (VEBO)
12 V
Max Collector Current
4:00 AM
Max Operating Temperature
4 A
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
70 W

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