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STMicroelectronics BU808DFI

Bipolar (BJT) Transistor NPN - Darlington 7 V 8 A - 52 W Through Hole ISOWATT-218

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT-93
Mount
-65 °C
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
1.4 kV
Collector Emitter Breakdown Voltage
700 V
Collector Emitter Voltage (VCEO)
700 V
Continuous Collector Current
8:00 AM
Current Rating
8 A
Element Configuration
8 A
Emitter Base Voltage (VEBO)
5 V
Max Collector Current
8:00 AM
Max Operating Temperature
8 A
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Polarity
NPN
Power Dissipation
52 W
Voltage Rating (DC)
700 V

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