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STMicroelectronics BU508AW

Bipolar (BJT) Transistor NPN 7 V 8 A - 125 W Through Hole TO-247-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.15 mm
Length
15.75 mm
Width
5.15 mm

Physical

Case/Package
TO-247
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
700 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
700 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
9 V
hFE Min
24.45 mm
Max Collector Current
8 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
125 W

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