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STMicroelectronics BD711

Bipolar (BJT) Transistor NPN 1 V 12 A 3MHz 75 W Through Hole TO-22AB

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
9.15 mm
Length
10.4 mm
Width
IBS

Physical

Case/Package
TO-220
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Technical

Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
100 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
3 MHz
Gain Bandwidth Product
3 MHz
hFE Min
40
Max Collector Current
12 A
Max Frequency
3 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
75 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
75 W
Transition Frequency
3 MHz

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