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STMicroelectronics BD679

Bipolar (BJT) Transistor NPN - Darlington 8 V 4 A - 4 W Through Hole SOT-32-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
11.05 mm
Length
7.8 mm
Width
2.9 mm

Physical

Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
4 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
750
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
40 W
Voltage Rating (DC)
80 V

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