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STMicroelectronics BD442

Bipolar (BJT) Transistor PNP 80 V 4 A - 36 W Through Hole SOT-32

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
10.8 mm
Length
7.8 mm
Width
2.7 mm

Physical

Case/Package
SOT-32
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
800 mV
Collector Emitter Voltage (VCEO)
80 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
3 MHz
Max Collector Current
4:00 AM
Max Frequency
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
36 W

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