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STMicroelectronics BD437

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
10.8 mm
Length
7.8 mm
Width
2.7 mm

Physical

Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
45 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
600 mV
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
3 MHz
Gain Bandwidth Product
3 MHz
hFE Min
30
Max Collector Current
4 A
Max Frequency
3 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
36 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
36 W
Transition Frequency
3 MHz

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