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STMicroelectronics BD435

Bipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole SOT-32-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SOT-32
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
32 V
Collector Emitter Breakdown Voltage
32 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
32 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
3 MHz
Gain Bandwidth Product
3 MHz
hFE Min
40
Max Collector Current
4 A
Max Frequency
3 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
36 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
36 W
Transition Frequency
3 MHz

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