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STMicroelectronics BD241C

Bipolar (BJT) Transistor NPN 100 V 3 A - 40 W Through Hole TO-220

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
9.15 mm
Length
10.4 mm
Width
4.6 mm

Physical

Case/Package
TO-220
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
1.2 V
Collector Emitter Voltage (VCEO)
100 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
25
Max Collector Current
3 A
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
40 W

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