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STMicroelectronics BD140

Bipolar (BJT) Transistor PNP 8 V 1.5 A - 1.25 W Through Hole SOT-32-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
10.8 mm
Length
7.8 mm
Width
IBS

Physical

Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
-1.5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
40
Max Breakdown Voltage
80 V
Max Collector Current
1.5 A
Max Operating Temperature
150 °C
Max Power Dissipation
12.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
1.25 W
Voltage Rating (DC)
-80 V

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