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STMicroelectronics 2STW200

Bipolar (BJT) Transistor PNP - Darlington 8 V 25 A - 13 W Through Hole TO-247-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
24.45 mm

Physical

Case/Package
TO-247
Contact Plating
Tin
Mount
Through Hole
Weight
6.500007 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1.2 V
Collector Emitter Voltage (VCEO)
80 V
Continuous Collector Current
25 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
1 V
hFE Min
300
Max Collector Current
25 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
130 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
130 W

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