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STMicroelectronics 2SB772

Bipolar Transistors - BJT PNP Medium Power -30VCEO -5VBEO

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
11.05 mm
Length
7.8 mm
Width
IBS

Physical

Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
-1.1 V
Collector Emitter Voltage (VCEO)
30 V
Current Rating
-3 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
100
Max Collector Current
3 A
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
12.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
12.5 W
Transition Frequency
100 MHz
Voltage Rating (DC)
-30 V

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