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STMicroelectronics 2N5657

Bipolar Transistors - BJT NPN Fast Switching

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Compliance

Lead Free
Contains Lead
Radiation Hardening
No
RoHS
Non-Compliant

Physical

Case/Package
TO-126-3
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
375 V
Collector Emitter Breakdown Voltage
350 V
Collector Emitter Voltage (VCEO)
350 V
Current Rating
500 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
10 MHz
hFE Min
30
Max Collector Current
500 mA
Max Operating Temperature
150 °C
Max Power Dissipation
20 W
Min Operating Temperature
-65 °C
Polarity
NPN
Transition Frequency
10 MHz
Voltage Rating (DC)
375 V

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