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STMicroelectronics 2N3055...

Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
8.7 mm
Length
39.5 mm
Width
26.2 mm

Physical

Case/Package
TO-3
Mount
Chassis Mount, Through Hole
Number of Pins
2
Weight
4.535924 g

Technical

Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
60 V
Current
15 A
Current Rating
15 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
Gain Bandwidth Product
3 MHz
hFE Min
20
Max Breakdown Voltage
15 A
Max Collector Current
200 °C
Max Operating Temperature
115 W
Max Power Dissipation
-65 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
115 W
Transition Frequency
3 MHz
Voltage
IBS
Voltage Rating (DC)
60 V

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