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STMicroelectronics 2N2907A

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Diameter
5.8 mm
Height
5.3 mm
Length
5.8 mm
Width
5.8 mm

Physical

Case/Package
TO-18
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
-1.6 V
Collector Emitter Voltage (VCEO)
60 V
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
50
Max Collector Current
600 mA
Max Frequency
200 MHz
Max Operating Temperature
-175 °C
Max Power Dissipation
400 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
400 mW
Transition Frequency
200 MHz
Voltage
60 V
Voltage Rating (DC)
IBS

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