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STMicroelectronics 2N2905A

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 600 mW Through Hole TO-39

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Diameter
9.4 mm
Height
6.6 mm
Length
9.4 mm
Width
9.4 mm

Physical

Case/Package
TO-39
Mount
Through Hole
Number of Pins
3
Weight
IBS

Technical

Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-1.6 V
Collector Emitter Voltage (VCEO)
-60 V
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
50
Manufacturer Package Identifier
-65 °C
Max Collector Current
TO39-P008B
Max Frequency
200 MHz
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
600 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-60 V

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