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ROHM R8008ANX

Trans MOSFET N-CH Si 800V 8A 3-Pin(3+Tab) TO-220FM Bulk

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
1.03 Ω

Physical

Case/Package
TO-220-3
Mount
Through Hole

Technical

Continuous Drain Current (ID)
8:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
1.03 Ω
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
30 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.08 nF
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Operating Temperature
-55 °C
Packaging
Bulk
Power Dissipation
50 W
Rds On Max
1.03 Ω
Rise Time
50 ns
Turn-Off Delay Time
85 ns
Turn-On Delay Time
Compliant

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