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ROHM QS5K2TR

ROHM QS5K2TR Dual N-channel MOSFET Transistor; 2 A; 30 V; 5-Pin TSMT

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
100 MΩ

Dimensions

Height
850 µm
Length
2.9 mm
Width
1.6 mm

Physical

Case/Package
SOT-23-5
Mount
-55 °C
Number of Pins
5
Number of Terminals
5

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2:00 AM
Current Rating
2 A
Drain to Source Breakdown Voltage
2 A
Drain to Source Resistance
110 mΩ
Drain to Source Voltage (Vdss)
110 mΩ
Element Configuration
Dual
Fall Time
10 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
850 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.5 V
Power Dissipation
1.25 W
Rds On Max
100 mΩ
Resistance
100 MΩ
Rise Time
100 mΩ
Threshold Voltage
10 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
8 ns
Voltage Rating (DC)
IBS

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