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ROHM IMH3AT110

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 5V 1mA 25MHz 3mW Surface Mount SMT6

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
6
Number of Terminals
6

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
hFE Min
100
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Output Current
100 mA
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Operating Supply Voltage
50 V
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
50 V

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