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ROHM IMD2AT108

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 5V 1mA 25MHz 3mW Surface Mount SMT6

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.2 mm
Length
3 mm
Width
1.8 mm

Physical

Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
74

Technical

Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Continuous Collector Current
30 mA
Current Rating
30 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
hFE Min
56
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Output Current
100 mA
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Operating Supply Voltage
50 V
Packaging
Tape & Reel (TR)
Polarity
NPN, PNP
Power Dissipation
300 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
IBS

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