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ROHM 2SC5658T2LR

Bipolar (BJT) Transistor NPN 5 V 15 mA 18MHz 15 mW Surface Mount VMT3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Y

Dimensions

Height
500 µm
Length
1.2 mm
Width
IBS

Physical

Case/Package
SOT-723
Contact Plating
Copper, Tin
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
150 mA
Current Rating
150 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
Frequency
180 MHz
Gain Bandwidth Product
180 MHz
hFE Min
500 µm
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Frequency
180 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
180 MHz
Voltage Rating (DC)
50 V

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