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ROHM 2SB1132T100Q

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SOT-89
Contact Plating
Copper, Tin
Mount
Surface Mount
Number of Pins
4

Technical

Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
32 V
Collector Emitter Voltage (VCEO)
32 V
Continuous Collector Current
-1 A
Current Rating
-1 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
150 MHz
Gain Bandwidth Product
150 MHz
hFE Min
82
Max Breakdown Voltage
32 V
Max Collector Current
1 A
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
2 W
Transition Frequency
150 MHz
Voltage Rating (DC)
-32 V

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