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Optek OPB847
产品详情
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Compliance
Radiation Hardening
No
RoHS
Compliant
Physical
Mount
Through Hole
Number of Pins
4
Technical
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Fall Time
20 µs
Forward Current
50 mA
Max Breakdown Voltage
30 V
Max Operating Temperature
85 °C
Min Operating Temperature
-40 °C
Number of Elements
1
Output Configuration
Phototransistor
Packaging
Bulk
Power Dissipation
100 mW
Response Time
12 µs
Reverse Breakdown Voltage
2 V
Rise Time
20 µs
Sensing Distance
2.54 mm
Touchscreen
Infrared (IR)
Wavelength
890 nm