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onsemi FJX2907ATF

Bipolar Transistors - BJT PNP Epitaxial Transistor

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT-323
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
-1.6 V
Collector Emitter Voltage (VCEO)
60 V
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Max Breakdown Voltage
60 V
Max Collector Current
600 mA
Max Frequency
200 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
325 mW
Number of Elements
1
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
325 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-60 V

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