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onsemi FJP2145TU

Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
16.51 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-220
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
1.1 kV
Collector Emitter Breakdown Voltage
800 V
Collector Emitter Saturation Voltage
151 mV
Collector Emitter Voltage (VCEO)
800 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
Gain Bandwidth Product
15 MHz
Gate to Source Voltage (Vgs)
20 V
hFE Min
20
Max Collector Current
125 °C
Max Operating Temperature
125 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
120 W
Transition Frequency
15 MHz

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