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onsemi FJE3303H1TU

Bipolar (BJT) Transistor NPN 400 V 1.5 A 4MHz 20 W Through Hole TO-126-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
11 mm
Length
8 mm
Width
3.25 mm

Physical

Case/Package
TO-126
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
3 V
Collector Emitter Voltage (VCEO)
400 V
Continuous Drain Current (ID)
1.5 A
Current Rating
1.5 A
Drain to Source Breakdown Voltage
700 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
9 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
hFE Min
8
Max Collector Current
1.5 A
Max Frequency
100 kHz
Max Operating Temperature
150 °C
Max Power Dissipation
20 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
20 W
Transition Frequency
4 MHz
Voltage Rating (DC)
400 V

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