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onsemi FJD3305H1TM

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
400 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
9 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
hFE Min
19
Max Breakdown Voltage
400 V
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
1.1 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
1.1 W
Transition Frequency
4 MHz

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