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onsemi FGL60N100BNTD

IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
29 mm
Length
20 mm
Width
5 mm

Physical

Case/Package
TO-264
Mount
Through Hole
Number of Pins
3
Weight
6.756 g

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Emitter Breakdown Voltage
1 kV
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
1 kV
Continuous Collector Current
60 A
Current Rating
60 A
Element Configuration
Single
Max Breakdown Voltage
1 kV
Max Collector Current
60 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
180 W
Min Operating Temperature
-55 °C
Polarity
NPN
Power Dissipation
180 W
Reverse Recovery Time
1.2 µs
Rise Time
320 ns
Turn-Off Delay Time
630 ns
Turn-On Delay Time
140 ns
Voltage Rating (DC)
1 kV

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