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onsemi FGA60N65SMD

Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
23.8 mm
Length
15.8 mm
Width
5 mm

Physical

Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.9 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
120 A
Element Configuration
Single
Max Collector Current
120 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
600 W
Min Operating Temperature
-55 °C
Power Dissipation
600 W
Reverse Recovery Time
47 ns
Turn-Off Delay Time
104 ns
Turn-On Delay Time
18 ns

合规性文件

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