跳转到主要内容

onsemi FGA50N100BNTDTU

IGBT 1000V 50A 156W TO3P / Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube

产品详情

Find similar products  

Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
20.1 mm
Length
15.8 mm
Width
5 mm

Physical

Mount
-55 °C
Number of Pins
3
Weight
1.5 µs

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Emitter Breakdown Voltage
1 kV
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
1 kV
Element Configuration
Single
Max Collector Current
50 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
156 W
Reverse Recovery Time
1.5 µs

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us