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onsemi FGA25N120ANTDTU

Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
23.8 mm
Length
15.8 mm
Width
5 mm

Physical

Mount
Through Hole
Number of Pins
3
Weight
6.40101 g

Technical

Collector Emitter Breakdown Voltage
1.2 kV
Collector Emitter Saturation Voltage
2.65 V
Collector Emitter Voltage (VCEO)
1.2 kV
Continuous Collector Current
50 A
Current Rating
50 A
Element Configuration
Single
Max Collector Current
50 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
312 W
Min Operating Temperature
-55 °C
Power Dissipation
312 mW
Reverse Recovery Time
350 ns
Rise Time
60 ns
Turn-Off Delay Time
190 ns
Turn-On Delay Time
50 ns
Voltage Rating (DC)
1.2 kV

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