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onsemi FDY1002PZ

Dual P-Channel PowerTrench MOSFET, (-1.5 V) Specified, -20V, -0.83A, 0.5

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
500 mΩ

Dimensions

Height
600 µm
Length
1.7 mm
Width
IBS

Physical

Case/Package
SOT-563
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
32 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-830 mA
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
280 mΩ
Drain to Source Voltage (Vdss)
280 mΩ
Element Configuration
Dual
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
700 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
446 mW
Rds On Max
500 mΩ
Resistance
500 mΩ
Rise Time
500 mΩ
Turn-Off Delay Time
2.9 ns
Turn-On Delay Time
Compliant

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