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onsemi FDT86256

Trans MOSFET N-CH Si 150V 1.2A 4-Pin(3+Tab) SOT-223 T/R

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Compliance

Radiation Hardening
No
RoHS
845 mΩ

Dimensions

Height
1.7 mm
Length
6.7 mm
Width
IBS

Physical

Case/Package
SOT-223
Mount
-55 °C
Weight
Compliant

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
1.2 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
695 mΩ
Drain to Source Voltage (Vdss)
695 mΩ
Element Configuration
Single
Fall Time
2.6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.8 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.3 W
Rds On Max
845 mΩ
Rise Time
1.7 ns
Turn-Off Delay Time
4.8 ns
Turn-On Delay Time
2.7 ns

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