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onsemi FDT86246

N-Channel Power Trench MOSFET 150V, 2A, 236m

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.7 mm
Length
3.7 mm
Width
6.7 mm

Physical

Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
4
Weight
250.2 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
236 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
1.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
215 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2.2 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.1 V
Number of Elements
1
Power Dissipation
2.2 W
Rds On Max
236 mΩ
Rise Time
2.3 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
4.6 ns
Turn-On Delay Time
7.8 ns

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