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onsemi FDT457N

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.8 mm
Length
6.5 mm
Width
3.56 mm

Physical

Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
4
Weight
250.2 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
5 A
Current Rating
5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
235 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3 W
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
3 W
Rds On Max
60 mΩ
Resistance
60 mΩ
Rise Time
12 ns
Threshold Voltage
1.6 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
30 V

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