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onsemi FDT439N

N-Channel Enhancement Mode Field Effect Transistor 30V, 2.5V Specified, 6.3A, 45m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.8 mm
Length
6.5 mm
Width
3.56 mm

Physical

Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4
Weight
250.2 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.3 A
Current Rating
6.3 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
38 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
500 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3 W
Min Operating Temperature
-55 °C
Nominal Vgs
670 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
3 W
Rds On Max
45 mΩ
Resistance
45 mΩ
Rise Time
10 ns
Termination
SMD/SMT
Threshold Voltage
670 mV
Turn-Off Delay Time
30 ns
Turn-On Delay Time
6 ns
Voltage Rating (DC)
30 V

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