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onsemi FDT3612

ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.8 mm
Length
6.5 mm
Width
3.56 mm

Physical

Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
250.2 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.7 A
Current Rating
3.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
88 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
632 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
3 W
Rds On Max
120 mΩ
Resistance
120 MΩ
Rise Time
2 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
23 ns
Turn-On Delay Time
8.5 ns
Voltage Rating (DC)
100 V

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