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onsemi FDS9958

Transistor MOSFET Array Dual P-CH 60V 2.9A 8-Pin SOIC T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
4.9 mm
Width
3.9 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-2.9 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
82 mΩ
Drain to Source Voltage (Vdss)
-60 V
Element Configuration
Dual
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.02 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
900 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
2 W
Rds On Max
105 mΩ
Resistance
105 MΩ
Rise Time
3 ns
Threshold Voltage
-1.6 V
Turn-Off Delay Time
27 ns
Turn-On Delay Time
6 ns

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