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onsemi FDS8984

Transistor MOSFET Array Dual N-CH 30V 7A 8-Pin SOIC T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
23 MΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7:00 AM
Current Rating
7:00 AM
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
635 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.7 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
23 mΩ
Resistance
23 MΩ
Rise Time
23 mΩ
Threshold Voltage
1.7 V
Turn-Off Delay Time
42 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
30 V

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