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onsemi FDS8949

Dual N-Channel PowerTrench MOSFET, Logic Level, 40V, 6A, 29m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
29 mΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6:00 AM
Current Rating
6 A
Drain to Source Breakdown Voltage
6 A
Drain to Source Resistance
21 mΩ
Drain to Source Voltage (Vdss)
21 mΩ
Dual Supply Voltage
40 V
Element Configuration
Dual
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
955 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
29 mΩ
Resistance
29 mΩ
Rise Time
29 mΩ
Termination
5 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
23 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
40 V

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