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onsemi FDS8935
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Compliance
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
28 mΩ
Dimensions
Height
1.5 mm
Length
4 mm
Width
5 mm
Physical
Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
IBS
Supply Chain
Lifecycle Status
EOL
Technical
Continuous Drain Current (ID)
-2.1 A
Drain to Source Breakdown Voltage
-80 V
Drain to Source Resistance
148 mΩ
Drain to Source Voltage (Vdss)
148 mΩ
Element Configuration
Dual
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.8 V
Number of Channels
2
Number of Elements
2
Power Dissipation
3.1 W
Rds On Max
28 mΩ
Rise Time
3 ns
Threshold Voltage
-1.8 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
5 ns