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onsemi FDS89161LZ
产品详情
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Compliance
Radiation Hardening
No
RoHS
105 mΩ
Dimensions
Height
1.575 mm
Length
4.9 mm
Width
IBS
Physical
Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
187 mg
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
105 mΩ
Drain to Source Voltage (Vdss)
105 mΩ
Element Configuration
Dual
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Power Dissipation
31 W
Rds On Max
105 mΩ
Rise Time
10 ns
Turn-Off Delay Time
9.5 ns
Turn-On Delay Time
Compliant