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onsemi FDS89161

Dual N-Channel Shielded Gate PowerTrench MOSFET 100V, 2.7A, 105m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
4 mm
Width
5 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
86 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Dual
Fall Time
1.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
210 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
31 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
1.6 W
Rds On Max
105 mΩ
Rise Time
1.3 ns
Threshold Voltage
3 V
Turn-Off Delay Time
7.3 ns
Turn-On Delay Time
4.2 ns

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