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onsemi FDS8870

Single N-Channel 30 V 2.5 W 112 nC Silicon Surface Mount Mosfet - SOIC-8

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
4.2 MΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
4.2 mΩ
Drain to Source Voltage (Vdss)
4.2 mΩ
Element Configuration
Single
Fall Time
21 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.615 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
2.5 W
Rds On Max
4.2 mΩ
Resistance
4.2 MΩ
Rise Time
4.2 mΩ
Threshold Voltage
Compliant
Turn-Off Delay Time
60 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
30 V

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