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onsemi FDS8840NZ
产品详情
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Compliance
Radiation Hardening
No
RoHS
4.5 mΩ
Dimensions
Height
1.575 mm
Length
4.9 mm
Width
IBS
Physical
Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
130 mg
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
18.6 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
4.5 mΩ
Drain to Source Voltage (Vdss)
4.5 mΩ
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.535 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
4.5 mΩ
Rise Time
13 ns
Turn-Off Delay Time
57 ns
Turn-On Delay Time
Compliant